Oct 27th, 2021 Intel Core 12th Gen Alder Lake Preview.Nov 1st, 2021 Gigabyte M32U Review - Finally a Reasonably Priced 4K Gaming Monitor.Nov 19th, 2021 Intel Core i9-12900K E-Cores Only Performance Review.Nov 4th, 2021 86 Motherboards Compared for Intel Z690 Alder Lake.DDR5 on Intel Core i9-12900K Alder Lake Review Nov 4th, 2021 Intel Core i5-12600K Review - Winning Price/Performance.Nov 4th, 2021 Intel Core i7-12700K Review - Almost as Fast as the i9-12900K.Nov 4th, 2021 Intel Core i9-12900K Review - Fighting for the Performance Crown.Power Down Mode - can modestly save system power at the expense of higher DRAM latency by putting DRAM into a quiescent state after a period of inactivity.Enabling Geardown Mode will override your current command rate. OFF will vary from memory kit to memory kit. ON is the default for speeds greater than DDR4-2667. Geardown Mode - allows the DRAM device to run off its internally-generated ВЅ rate clock for latching on the command or address buses.The specific DQ pin receiver resistance presented to the interface is selected by a combination of the initial chip configuration and the DRAM operating command if dynamic on-die termination is enabled. RTT (Signal Integrity Optimizations) - the use of multiple ranks of DRAM on the DDR4 interface requires additional options for selecting the on-die terminating resistance for individual ranks.ДDR4 DRAM offers a range of terminating resistance values.Higher values can help stabilize higher data rates. procODT - resistance value, in ohms, that determines how a completed memory signal is terminated.I suggest you try decreasing 'Command & Address' related drive currents (increasing the resistance). CAD_BUS - Command & Address bus for those who are able to train the memory at high speeds (>=3466MHz), but are unable to stabilize it due to signaling issues.PLL (1P8) voltage - This option can be used to stabilize the CPU at high BCLKs.This is done by resistor parallel termination. VTT DDR voltage - voltage used to control the impedance of the bus in order to achieve the high speed and maintain signal integrity.These options are configured as a multiplier. Some motherboards allow the user to change this ratio, usually through two options: (1) 'DRAM Ctrl Ref Voltage' (for the control lines from the memory bus JEDEC's official name for this voltage is VREFCA), and (2) 'DRAM Ctrl Data Ref Voltage' (for the data lines from the memory bus JEDEC's official name is 'VREFDQ'). Vref voltage - memory reference voltage 'Configures' both the CPU and the memory module with the voltage level that separates what is to be considered a '0' or a '1' i.e., voltages found on the memory bus below MEMVREF are to be considered a '0,' and voltages above this level are to be considered a '1.' By default, this voltage level is half of VDDIO (a.k.a.VPP (VPPM) voltage - voltage that determines how reliably a DRAM row gets accessed.A cold reboot is required if you alter this voltage. Small changes to VDDP can have a big effect, and VDDP cannot not be set to a value greater than VDIMM - 0.1 V (not to exceed 1.05 V). Advanced overclockers should also know that altering CLDO VDDP can move or resolve memory holes. Somewhat counterintuitively, lowering VDDP can often be more beneficial for stability than raising CLDO_VDDP. The DDR4 PHY or physical-layer interface converts information from the memory controllers to a format the DDR4 memory modules can understand. CLDO VDDP voltage - voltage for the DDR4 PHY on the SoC.VDDP voltage - voltage for the transistor that sets memory contents.DRAM boot voltage - voltage at which memory training takes place at system start-up.SOC voltage - system on a chip voltage responsible for the voltage related to the memory controller.Some other terms are new and specific to the 'Zen' architecture. Ryzen uses the industry-standard DDR4 memory architecture, so you may be familiar with some of these terms. Glossary of TermsBelow is a list of technical terms relevant to overclocking the memory of a Ryzen-powered machine.

Pbp3 overrides vref settings